GOFORD G170P03S2

GOFORD · FETs & Power MOSFETs · MPN G170P03S2

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Specifications

Current - Continuous Drain(Id)11A
RDS(on)15mΩ@10V
Pd - Power Dissipation1.4W
Gate Threshold Voltage (Vgs(th))1.6V
Drain to Source Voltage30V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)208pF
Number2 P-Channel
Input Capacitance(Ciss)1.786nF
Gate Charge(Qg)40nC
Vgs±20V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 30V 9A 1.4W Surface Mount SOP-8

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