GOFORD G170P03D3

GOFORD · FETs & Power MOSFETs · MPN G170P03D3

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Specifications

Output Capacitance(Coss)236pF
Pd - Power Dissipation35W
Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)35nC
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Reverse Transfer Capacitance (Crss@Vds)207pF
RDS(on)12mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.805nF

Technical details

P-Channel 30V 20A 28W Surface Mount DFN3x3-8L

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