GOFORD G170P02D32

GOFORD · FETs & Power MOSFETs · MPN G170P02D32

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Specifications

Current - Continuous Drain(Id)20A
RDS(on)15mΩ@4.5V
Pd - Power Dissipation15W
Gate Threshold Voltage (Vgs(th))700mV
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)276pF
Number2 P-Channel
Input Capacitance(Ciss)2.193nF
Gate Charge(Qg)30nC
Vgs±12V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 20V 20A 15W Surface Mount DFN-8L(3x3)Dual

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