GOFORD G16P03S-B

GOFORD · FETs & Power MOSFETs · MPN G16P03S-B

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)24nC
Output Capacitance(Coss)215pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation3W
RDS(on)12mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)180pF
Number1 P-Channel
Input Capacitance(Ciss)1.75nF
Vgs±12V

Technical details

P-Channel 30V 16A 3W Surface Mount SOP-8

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