GOFORD G16P03S

GOFORD · FETs & Power MOSFETs · MPN G16P03S

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Specifications

Gate Charge(Qg)35nC
Drain to Source Voltage30V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)335pF
RDS(on)9.9mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.8nF
Vgs±20V

Technical details

P-Channel 30V 16A 3W Surface Mount SOP-8

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