GOFORD G16P03D3-BQ

GOFORD · FETs & Power MOSFETs · MPN G16P03D3-BQ

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Specifications

Output Capacitance(Coss)344pF
Pd - Power Dissipation55W
Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)35nC
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Reverse Transfer Capacitance (Crss@Vds)342pF
RDS(on)8.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.805nF

Technical details

P-Channel 30V 45A 55W Surface Mount DFN3x3-8L

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