GOFORD G16P03D3

GOFORD · FETs & Power MOSFETs · MPN G16P03D3

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Specifications

Gate Charge(Qg)35nC
Drain to Source Voltage30V
Output Capacitance(Coss)344pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)342pF
RDS(on)8.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.805nF
Vgs±20V

Technical details

P-Channel 30V 16A 3W Surface Mount DFN3x3-8L

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