GOFORD G16N03A

GOFORD · FETs & Power MOSFETs · MPN G16N03A

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Specifications

Gate Charge(Qg)13nC
Drain to Source Voltage33V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.55nF
Vgs±20V

Technical details

30V 16A 30W Surface Mount DFN5x6-8L

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