GOFORD G160P03K

GOFORD · FETs & Power MOSFETs · MPN G160P03K

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Specifications

Gate Charge(Qg)31.2nC
Drain to Source Voltage30V
Output Capacitance(Coss)240pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)208pF
RDS(on)12mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.811nF
Vgs±20V

Technical details

P-Channel 30V 30A 60W Surface Mount TO-252

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