GOFORD G160N04S2

GOFORD · FETs & Power MOSFETs · MPN G160N04S2

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Specifications

Current - Continuous Drain(Id)9A
Pd - Power Dissipation2.5W
RDS(on)11mΩ@10V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)80pF
Number2 N-Channel
Input Capacitance(Ciss)989pF
Gate Charge(Qg)24nC
Vgs±20V
Operating Temperature-55℃~+150℃

Technical details

40V 9A 2.5W Surface Mount SOP-8Dual

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