GOFORD G160N04S

GOFORD · FETs & Power MOSFETs · MPN G160N04S

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Specifications

Gate Charge(Qg)24nC
Drain to Source Voltage40V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.5W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)80pF
Number1 N-channel
Input Capacitance(Ciss)1nF
Vgs±20V

Technical details

N-Channel 40V 9A 2.5W Surface Mount SOP-8

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