GOFORD G160N04K

GOFORD · FETs & Power MOSFETs · MPN G160N04K

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Specifications

Gate Charge(Qg)20nC
Drain to Source Voltage40V
Output Capacitance(Coss)82pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation43W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.01nF
Vgs±20V

Technical details

N-Channel 40V 25A 43W Surface Mount TO-252

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