GOFORD · FETs & Power MOSFETs · MPN G160N04D32
No reviews yet — be the first to review GOFORD G160N04D32.
| Operating Temperature | -55℃~+150℃ |
|---|---|
| Output Capacitance(Coss) | 90pF |
| Configuration | - |
| Current - Continuous Drain(Id) | 21A |
| RDS(on) | 13mΩ@10V |
| Pd - Power Dissipation | 23W |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1nF |
21A 13mΩ@10V 23W 1.6V 2 N-Channel DFN-8L(3x3) FET, MOSFET Arrays RoHS