GOFORD · FETs & Power MOSFETs · MPN G160C04Y
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| Output Capacitance(Coss) | 90pF;110pF |
|---|---|
| Pd - Power Dissipation | 43W;40W |
| Configuration | - |
| Gate Charge(Qg) | 24nC;25nC |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 25A;12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V;1.5V |
| RDS(on) | 11mΩ@10V;28mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF;100pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1nF;1.2nF |
40V 1 N-Channel + 1 P-Channel N-Channel + P-Channel TO-252-4D Single FETs, MOSFETs RoHS