GOFORD G1601

GOFORD · FETs & Power MOSFETs · MPN G1601

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Specifications

Gate Charge(Qg)3.3nC
Drain to Source Voltage20V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)2.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation900mW
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)55mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)405pF
Vgs±12V

Technical details

20V 2.6A 0.9W Surface Mount SOT-23

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