GOFORD · FETs & Power MOSFETs · MPN G15N10C
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| Gate Charge(Qg) | 22nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 34pF |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 78mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.167nF |
| Vgs | ±20V |
100V 22A 2V 55W 78mΩ@10V 1 N-channel N-Channel TO-252-2 Single FETs, MOSFETs RoHS