GOFORD G15N06K

GOFORD · FETs & Power MOSFETs · MPN G15N06K

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Specifications

Gate Charge(Qg)16nC
Drain to Source Voltage60V
Output Capacitance(Coss)46pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)31mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)765pF
Vgs±20V

Technical details

N-Channel 100V 15A 40W Surface Mount TO-252

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