GOFORD G15

GOFORD · FETs & Power MOSFETs · MPN G15

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Specifications

Gate Charge(Qg)35nC
Drain to Source Voltage12V
Output Capacitance(Coss)680pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)590pF
RDS(on)14.4mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.7nF
Vgs±8V

Technical details

P-Channel 12V 8A 2W Surface Mount SOT-23-3

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