GOFORD G13P04S

GOFORD · FETs & Power MOSFETs · MPN G13P04S

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Specifications

Gate Charge(Qg)40nC
Drain to Source Voltage40V
Output Capacitance(Coss)324pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)247pF
RDS(on)13mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.271nF
Vgs±20V

Technical details

P-Channel 40V 13A 3W Surface Mount SOP-8

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