GOFORD G135P04S

GOFORD · FETs & Power MOSFETs · MPN G135P04S

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Specifications

Gate Charge(Qg)49nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)10A
Output Capacitance(Coss)220pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)207pF
RDS(on)12mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.3nF
Vgs±20V

Technical details

P-Channel 40V 10A 2.8W Surface Mount SOP-8

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