GOFORD G135P04D3

GOFORD · FETs & Power MOSFETs · MPN G135P04D3

No reviews yet — be the first to review GOFORD G135P04D3.

Specifications

Gate Charge(Qg)33nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)25A
Output Capacitance(Coss)220pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)207pF
RDS(on)11.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.3nF
Vgs±20V

Technical details

P-Channel 40V 25A 31W Surface Mount DFN-8L(3x3)

Related FETs & Power MOSFETs