GOFORD G130N06S2

GOFORD · FETs & Power MOSFETs · MPN G130N06S2

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Specifications

Current - Continuous Drain(Id)9A
Pd - Power Dissipation2.6W
RDS(on)12.5mΩ@10V
Gate Threshold Voltage (Vgs(th))1.7V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)193pF
Number2 N-Channel
Input Capacitance(Ciss)3.021nF
Gate Charge(Qg)67nC
Vgs±20V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 60V 9A 2.6W Surface Mount SOP-8DUAL

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