GOFORD G130N06S

GOFORD · FETs & Power MOSFETs · MPN G130N06S

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Specifications

Gate Charge(Qg)67nC
Drain to Source Voltage60V
Output Capacitance(Coss)251pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation2.6W
Reverse Transfer Capacitance (Crss@Vds)197pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.068nF
Vgs±20V

Technical details

N-Channel 60V 9A 2.6W Surface Mount SOP-8

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