GOFORD G130N06M

GOFORD · FETs & Power MOSFETs · MPN G130N06M

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Specifications

Gate Charge(Qg)36.6nC
Drain to Source Voltage60V
Output Capacitance(Coss)163pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)147pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.867nF
Vgs±20V

Technical details

N-Channel 60V 90A 85W Surface Mount TO-263

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