GOFORD G12P06K

GOFORD · FETs & Power MOSFETs · MPN G12P06K

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Specifications

Gate Charge(Qg)23nC
Drain to Source Voltage60V
Output Capacitance(Coss)74pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation27W
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)56mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.108nF
Vgs±20V

Technical details

60V 12A 27W Surface Mount TO-252

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