GOFORD G12P04K-BQ

GOFORD · FETs & Power MOSFETs · MPN G12P04K-BQ

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Specifications

Output Capacitance(Coss)100pF
Pd - Power Dissipation50W
Configuration-
Drain to Source Voltage40V
Gate Charge(Qg)25nC
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Reverse Transfer Capacitance (Crss@Vds)98pF
RDS(on)29mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.163nF

Technical details

P-Channel 40V 12A 50W Surface Mount TO-252

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