GOFORD G12P03D3

GOFORD · FETs & Power MOSFETs · MPN G12P03D3

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Specifications

Gate Charge(Qg)24.5nC
Drain to Source Voltage30V
Output Capacitance(Coss)163pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)157pF
RDS(on)16mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.337nF
Vgs±20V

Technical details

P-Channel 30V 12A 3W Surface Mount DFN3x3-8L

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