GOFORD · FETs & Power MOSFETs · MPN G120P06T
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| Gate Charge(Qg) | 230nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 935pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 277W |
| Reverse Transfer Capacitance (Crss@Vds) | 671pF |
| RDS(on) | 7mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 12.674nF |
| Vgs | ±20V |
P-Channel 60V 120A 277W Through Hole TO-220