GOFORD G120P03S2

GOFORD · FETs & Power MOSFETs · MPN G120P03S2

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Specifications

Current - Continuous Drain(Id)16A
Pd - Power Dissipation1.4W
RDS(on)11mΩ@10V
Gate Threshold Voltage (Vgs(th))1.6V
Drain to Source Voltage30V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)324pF
Number2 P-Channel
Input Capacitance(Ciss)2.835nF
Gate Charge(Qg)35nC
Vgs±20V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 30V 16A 1.4W Surface Mount SOP-8

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