GOFORD G120N04A

GOFORD · FETs & Power MOSFETs · MPN G120N04A

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Specifications

Gate Charge(Qg)75nC
Drain to Source Voltage45V
Output Capacitance(Coss)970pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)380pF
RDS(on)3.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.4nF
Vgs±20V

Technical details

N-Channel 40V 120A 130W Through Hole TO-220

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