GOFORD G120N03S2

GOFORD · FETs & Power MOSFETs · MPN G120N03S2

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Specifications

Gate Charge(Qg)20nC
Drain to Source Voltage30V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.23W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)9mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)990pF
Vgs±20V

Technical details

N-Channel 30V 13A Surface Mount SOP-8-Dual

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