GOFORD G120N03D32

GOFORD · FETs & Power MOSFETs · MPN G120N03D32

No reviews yet — be the first to review GOFORD G120N03D32.

Specifications

Current - Continuous Drain(Id)28A
Pd - Power Dissipation20W
RDS(on)10mΩ@10V
Gate Threshold Voltage (Vgs(th))1.7V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)109pF
Number2 N-Channel
Input Capacitance(Ciss)1.089nF
Gate Charge(Qg)18nC
Vgs±20V
Operating Temperature-55℃~+150℃

Technical details

28A 20W 10mΩ@10V 1.7V 2 N-Channel DFN-8L(3x3) FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs