GOFORD · FETs & Power MOSFETs · MPN G120N03D32
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| Current - Continuous Drain(Id) | 28A |
|---|---|
| Pd - Power Dissipation | 20W |
| RDS(on) | 10mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.089nF |
| Gate Charge(Qg) | 18nC |
| Vgs | ±20V |
| Operating Temperature | -55℃~+150℃ |
28A 20W 10mΩ@10V 1.7V 2 N-Channel DFN-8L(3x3) FET, MOSFET Arrays RoHS