GOFORD G120N03D3

GOFORD · FETs & Power MOSFETs · MPN G120N03D3

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Specifications

Gate Charge(Qg)18nC
Drain to Source Voltage30V
Output Capacitance(Coss)123pF
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)106pF
RDS(on)6.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.077nF
Vgs±20V

Technical details

N-Channel 30V 28A 20W Surface Mount DFN3x3-8L

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