GOFORD G1208

GOFORD · FETs & Power MOSFETs · MPN G1208

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Specifications

Gate Charge(Qg)14nC
Drain to Source Voltage12V
Output Capacitance(Coss)255pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)236pF
RDS(on)28mΩ
Number1 P-Channel
Input Capacitance(Ciss)1.275nF
Vgs±8V

Technical details

P-Channel 12V 8A Surface Mount DFN2020-6(2x2)

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