GOFORD · FETs & Power MOSFETs · MPN G11S
No reviews yet — be the first to review GOFORD G11S.
| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 47nC |
| Output Capacitance(Coss) | 264pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 750mV |
| Pd - Power Dissipation | 3.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF |
| RDS(on) | 15mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.47nF |
| Vgs | ±12V |
P-Channel 20V 11A 3.3W Surface Mount SOP-8