GOFORD · FETs & Power MOSFETs · MPN G115P06M
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| Gate Charge(Qg) | 125nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 551pF |
| Current - Continuous Drain(Id) | 98A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 211.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 475pF |
| RDS(on) | 9mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 9.43nF |
| Vgs | ±20V |
P-Channel 60V 211.9W Surface Mount TO-263