GOFORD · FETs & Power MOSFETs · MPN G110N06T
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 144nC |
| Output Capacitance(Coss) | 330pF |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF |
| RDS(on) | 5.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.6nF |
| Vgs | ±20V |
N-Channel 60V 110A 160W Through Hole TO-220