GOFORD · FETs & Power MOSFETs · MPN G110N06K-BQ
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| Output Capacitance(Coss) | 334pF |
|---|---|
| Pd - Power Dissipation | 160W |
| Configuration | - |
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 122nC |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Reverse Transfer Capacitance (Crss@Vds) | 306pF |
| RDS(on) | 5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.469nF |
N-Channel 60V 110A 160W Surface Mount TO-252