GOFORD G10P03

GOFORD · FETs & Power MOSFETs · MPN G10P03

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)44nC
Output Capacitance(Coss)169pF
Current - Continuous Drain(Id)22A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation21.9W
RDS(on)20mΩ
Reverse Transfer Capacitance (Crss@Vds)165pF
Number1 P-Channel
Input Capacitance(Ciss)2.067nF
Vgs±12V

Technical details

P-Channel 30V 10A 20W Surface Mount DFN3x3-8L

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