GOFORD · FETs & Power MOSFETs · MPN G10N03S-BQ
No reviews yet — be the first to review GOFORD G10N03S-BQ.
| Output Capacitance(Coss) | 148pF |
|---|---|
| Pd - Power Dissipation | 2.23W |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 17nC |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Reverse Transfer Capacitance (Crss@Vds) | 134pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 832pF |
N-Channel 30V 13A 2.23W Surface Mount SOP-8