GOFORD G10N03S

GOFORD · FETs & Power MOSFETs · MPN G10N03S

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)20nC
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)990pF
Vgs±20V

Technical details

N-Channel 30V 10A 2.5W Surface Mount SOP-8

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