GOFORD G100P04KH

GOFORD · FETs & Power MOSFETs · MPN G100P04KH

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Specifications

Gate Charge(Qg)35nC
Drain to Source Voltage40V
Output Capacitance(Coss)335pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation58W
Reverse Transfer Capacitance (Crss@Vds)292pF
RDS(on)9.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.5nF
Vgs±20V

Technical details

P-Channel 40V 55A Surface Mount TO-252

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