GOFORD G100N03D5

GOFORD · FETs & Power MOSFETs · MPN G100N03D5

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)38nC
Output Capacitance(Coss)765pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)659pF
RDS(on)2.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.595nF
Vgs±20V

Technical details

N-Channel 30V 100A 50W Surface Mount DFN5x6-8L

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