GOFORD · FETs & Power MOSFETs · MPN G100C04D52
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| Operating Temperature | -55℃~+150℃ |
|---|---|
| Output Capacitance(Coss) | 173pF;224pF |
| Current - Continuous Drain(Id) | 40A;24A |
| Pd - Power Dissipation | 65W;50W |
| RDS(on) | 7mΩ@10V;13mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.8V;1.6V |
| Drain to Source Voltage | 40V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 156pF;213pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 2.213nF;2.451nF |
| Gate Charge(Qg) | 29nC;45nC |
N-Channel+P-Channel Array 40V 40A 24A Surface Mount DFN5x6-8L