GOFORD · FETs & Power MOSFETs · MPN G1006R
No reviews yet — be the first to review GOFORD G1006R.
| Gate Charge(Qg) | 15.5nC |
|---|---|
| Drain to Source Voltage | 112V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 114mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 690pF |
| Vgs | ±20V |
100V 3W Through Hole TO-92