GOFORD · FETs & Power MOSFETs · MPN G1006LE-BQ
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| Output Capacitance(Coss) | 30pF |
|---|---|
| Pd - Power Dissipation | 1.5W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 17nC |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 96mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 532pF |
N-Channel 100V 3A 1.5W Surface Mount SOT-23-3L