GOFORD G1003B-23

GOFORD · FETs & Power MOSFETs · MPN G1003B-23

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Specifications

Gate Charge(Qg)30nC
Drain to Source Voltage100V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.3W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)135mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)570pF
Vgs±25V

Technical details

100V 5A 3.3W Surface Mount SOT-23-3L

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