GOFORD G1002L

GOFORD · FETs & Power MOSFETs · MPN G1002L

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Specifications

Gate Charge(Qg)10nC
Drain to Source Voltage100V
Output Capacitance(Coss)17pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)413pF
Vgs±20V

Technical details

N-Channel 100V 2A 1.3W Surface Mount SOT-23-3L

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