GOFORD · FETs & Power MOSFETs · MPN G1002
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| Gate Charge(Qg) | 10nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 13pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 215mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 535pF |
| Vgs | ±20V |
100V 2A 1.6V 1.3W 215mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS