GOFORD G09P02L

GOFORD · FETs & Power MOSFETs · MPN G09P02L

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Specifications

Gate Charge(Qg)72nC
Drain to Source Voltage20V
Output Capacitance(Coss)277pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation2.2W
Reverse Transfer Capacitance (Crss@Vds)276pF
RDS(on)17mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.196nF
Vgs±12V

Technical details

P-Channel 20V 9A 2.2W Surface Mount SOT-23-3

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